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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STB130N6F7 датащи(PDF) 3 Page - STMicroelectronics |
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STB130N6F7 датащи(HTML) 3 Page - STMicroelectronics |
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3 / 14 page  STB130N6F7 Electrical ratings DocID027380 Rev 5 3/14 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ±20 V ID(1) Drain current (continuous) at Tcase = 25 °C 80 A Drain current (continuous) at Tcase = 100 °C 80 IDM(2) Drain current (pulsed) 320 A PTOT Total dissipation at Tcase = 25 °C 160 W EAS(3) Single pulse avalanche energy 200 mJ Tstg Storage temperature -55 to 175 °C Tj Operating junction temperature Notes: (1) Current is limited by package. (2) Pulse width is limited by safe operating area. (3) starting Tj = 25 °C, ID = 20 A, VDD = 40 V. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 0.94 °C/W Rthj-amb(1) Thermal resistance junction-ambient 35 Notes: (1) When mounted on a 1-inch² FR-4, 2 Oz copper board. |
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