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STB130N6F7 датащи(PDF) 1 Page - STMicroelectronics |
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STB130N6F7 датащи(HTML) 1 Page - STMicroelectronics |
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1 / 14 page ![]() December 2015 DocID027380 Rev 5 1/14 This is information on a product in full production. www.st.com STB130N6F7 N- channel 60 V, 4.2 mΩ typ., 80 A STripFET™ F7 Power MOSFET in a D²PAK package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STB130N6F7 60 V 5.0 mΩ 80 A 160 W Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packing STB130N6F7 130N6F7 D²PAK Tape and reel 1 3 TAB D2PAK AM01475v1_Tab D(2, TAB) G(1) S(3) |
Аналогичный номер детали - STB130N6F7 |
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Аналогичное описание - STB130N6F7 |
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