This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.

September 2014

DocID026884 Rev 1

1/13

RTP315N10F7

Aerospace and defense N-channel 100 V, 2.3 m

Ω typ., 180 A

STripFET™ F7 Power MOSFET in a TO-220 package

Datasheet

Figure 1. Internal schematic diagram

Features

• Intended for use in aerospace and defense

applications

• Dedicated traceability and part marking

• Production parts approval documents available

• Adapted extended life time and obsolescence

management

• Extended product change notification process

• Designed and manufactured to meet sub ppm

quality goals

• Extended screening capability on request

• Ultra low on-resistance

• 100% avalanche tested

Applications

• Switching applications

Description

This N-channel Power MOSFET utilizes the

STripFET™ F7 technology with enhanced trench-

gate structure that result in very low on-state

resistance while also reducing internal

capacitances and gate charge for faster and very

efficient switching.

1

2

3

TAB

TO-220

Order code

RTP315N10F7

100 V

2.7 m

Ω

180 A

Table 1. Device summary

Order code

Marking

Package

Packaging

RTP315N10F7

R315N10F7

TO-220

Tube

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