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RTP315N10F7 датащи(PDF) 7 Page - STMicroelectronics

номер детали RTP315N10F7
подробное описание детали  Aerospace and defense N-channel 100 V
PDF  13 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

RTP315N10F7 датащи(HTML) 7 Page - STMicroelectronics

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RTP315N10F7
Electrical characteristics
13
Figure 8. Capacitance variations
Figure 9. Source-drain diode forward
characteristics
Figure 10. Normalized gate threshold voltage vs
temperature
Figure 11. Normalized on-resistance vs
temperature
Figure 12. Normalized V(BR)DSS vs temperature
C
6000
4000
2000
0
0
40
VDS(V)
(pF)
20
8000
60
Ciss
Coss
Crss
10000
14000
80
100
12000
AM14738v1
TJ=-50°C
TJ=150°C
TJ=25°C
VSD
0
40
ISD(A)
(V)
160
80
120
0.45
0.55
0.65
0.75
0.85
0.95
1.05
AM14739v1
VGS(th)
0.90
0.80
0.70
0.60
TJ(°C)
(norm)
1.0
0
-25
75
25
-75
125
ID = 250µA
AM14741v1
RDS(on)
1.6
1.2
0.8
0.4
0
TJ(°C)
(norm)
-25
75
25
-75
125
2.0
ID = 60A
AM14740v1
0
-25
75
25
-75
125
V(BR)DSS
TJ(°C)
(norm)
0.94
0.96
0.98
1.00
1.02
1.04
ID = 1mA
AM14742v1



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