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AS4LC8M8S0 датащи(PDF) 9 Page - Alliance Semiconductor Corporation

номер детали AS4LC8M8S0
подробное описание детали  3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
PDF  24 Pages
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производитель  ALSC [Alliance Semiconductor Corporation]
домашняя страница  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4LC8M8S0 датащи(HTML) 9 Page - Alliance Semiconductor Corporation

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AS4LC8M8S0
AS4LC4M16S0
7/5/00
ALLIANCE SEMICONDUCTOR
9
AC parameters common to all waveforms (continued)
Notes
1
Minimum clock cycles = (Minimum time / clock cycle time) rounded up.
2
Minimum delay required to complete write.
3
Column address change allowed every cycle.
4
Parameters dependent on CAS latency.
5If clock rising time
> 1ns, (tr/2-0.5)ns should be added to parameter.
6
If (tr and tf)
> 1ns, [(tr+tf)/2-1]ns should be added to parameter.
7
Outputs measured at 1.5V with 50pF load only without resistive termination.
Burst sequence
(BL = 4)
Burst sequence
(BL = 8)
Sym
Parameter
CAS
latency
-75
-8
-10 F
-10
Unit
Notes
Min Max
Min
Max
Min
Max
Min
Max
tDQD
DQM to input data delay
1
–
1
–
1
–
1
–
CLK
tDQM DQM to data mast during writes
0
–
0
–
0
–
0
–
CLK
tDQZ
DQM to data high Z during
reads
2
–
2
–
2–
2–
CLK
tDWD
Write command to input data
delay
0
–
0
–
0–
0–
CLK
tDAL
Data-in to active command
5
–
5
–
5
–
5
–
CLK
tMRD
Load mode register to active/
refresh command
1
–
1
–
1–
1–
CLK
tROH
Data-out high Z from
precharge/burst stop command
33
–
3
–
3
–
3
–
CLK
4
22
–
2
–
2
–
2
–
CLK
4
tCKED
CKE to CLOCK disable or power-
down entry mode
1
–
1
–
1–
1–
CLK
tPED
CKE to clock enable or power-
down exit mode
1
–
1
–
1–
1–
CLK
Initial address
Sequential
Interleave
A1
A0
0
0
0
123
0123
0
1
1
230
1032
1
0
2
301
2301
1
1
3
012
3210
Initial address
Sequential
Interleave
A2
A1
A0
0
0
0
0123456701234567
0
0
1
1234567010325476
0
1
0
2345670123016745
0
1
1
3456701232107654
1
0
0
4567012345670123
1
0
1
5670123454761032
1
1
0
6701234567452301
1
1
1
7012345676543210



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