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AS4LC8M8S0 датащи(PDF) 9 Page - Alliance Semiconductor Corporation |
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AS4LC8M8S0 датащи(HTML) 9 Page - Alliance Semiconductor Corporation |
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9 / 24 page ![]() ® AS4LC8M8S0 AS4LC4M16S0 7/5/00 ALLIANCE SEMICONDUCTOR 9 AC parameters common to all waveforms (continued) Notes 1 Minimum clock cycles = (Minimum time / clock cycle time) rounded up. 2 Minimum delay required to complete write. 3 Column address change allowed every cycle. 4 Parameters dependent on CAS latency. 5If clock rising time > 1ns, (tr/2-0.5)ns should be added to parameter. 6 If (tr and tf) > 1ns, [(tr+tf)/2-1]ns should be added to parameter. 7 Outputs measured at 1.5V with 50pF load only without resistive termination. Burst sequence (BL = 4) Burst sequence (BL = 8) Sym Parameter CAS latency -75 -8 -10 F -10 Unit Notes Min Max Min Max Min Max Min Max tDQD DQM to input data delay 1 – 1 – 1 – 1 – CLK tDQM DQM to data mast during writes 0 – 0 – 0 – 0 – CLK tDQZ DQM to data high Z during reads 2 – 2 – 2– 2– CLK tDWD Write command to input data delay 0 – 0 – 0– 0– CLK tDAL Data-in to active command 5 – 5 – 5 – 5 – CLK tMRD Load mode register to active/ refresh command 1 – 1 – 1– 1– CLK tROH Data-out high Z from precharge/burst stop command 33 – 3 – 3 – 3 – CLK 4 22 – 2 – 2 – 2 – CLK 4 tCKED CKE to CLOCK disable or power- down entry mode 1 – 1 – 1– 1– CLK tPED CKE to clock enable or power- down exit mode 1 – 1 – 1– 1– CLK Initial address Sequential Interleave A1 A0 0 0 0 123 0123 0 1 1 230 1032 1 0 2 301 2301 1 1 3 012 3210 Initial address Sequential Interleave A2 A1 A0 0 0 0 0123456701234567 0 0 1 1234567010325476 0 1 0 2345670123016745 0 1 1 3456701232107654 1 0 0 4567012345670123 1 0 1 5670123454761032 1 1 0 6701234567452301 1 1 1 7012345676543210 |
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