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AS4LC8M8S0 датащи(PDF) 8 Page - Alliance Semiconductor Corporation

номер детали AS4LC8M8S0
подробное описание детали  3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
PDF  24 Pages
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производитель  ALSC [Alliance Semiconductor Corporation]
домашняя страница  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4LC8M8S0 датащи(HTML) 8 Page - Alliance Semiconductor Corporation

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ALLIANCE SEMICONDUCTOR
7/5/00
AS4LC4M16S0
AS4LC16M4S0
AC parameters common to all waveforms
Sym
Parameter
CAS
latency
-75
-8
-10F
-10
Unit Notes
Min Max
Min
Max
Min
Max
Min
Max
tRRD Row active to row active delay
15
20
20
20
ns
1
tRCD RAS to CAS delay time
20
20
20
30
ns
1
tRP Row precharge
20
20
20
30
ns
1
tRAS Row active
44
50
50
60
ns
1
tRC Row cycle time
66
70
70
90
ns
1
tCDL
Last data in to new column
address delay
1
1
1–1–
CLK
2
tRDL Last data in to row precharge
2
2
2
2
CLK
2
tBDL Last data in to burst stop
1
1
1
1
CLK
2
tCCD
Column address to column
address delay
1
1
1–1–
CLK
3
tCK CLK cycle time
37.5
8
10
10
ns
4
210
10
15
15
4
tAC CLK to valid output delay @ 50pF
35.4
6
6
6
ns
4,5,7
26
6
6
6
4,5,7
tOH Output data hold time @ 50 pF
32.7
3
3
3
ns
4,5,7
23
3
3
3
4,5,7
tCH CLK high pulse width
2.5
3
3
3
ns
6
tCL CLK low pulse width
2.5
3
3
3
ns
6
tAS Add setup time
1.5
2
2
2
ns
6
tAH Add hold time
0.8
1
1
1
ns
6
tSLZ CLK to output in low Z
1
1
1
1
ns
5
tSHZ CLK to output in high Z
3–
6
7
7
7
ns
2–
6
7
7
7
tCKH CKE hold time
0.8
1
1–1–
ns
tCKS CKE setup time
1.5
2
2
2
ns
tCMH
CS, RAS, CAS, WE, DQM hold
time
0.8
1
1–1–
ns
tCMS
CS, RAS, CAS, WE, DQM setup
time
1.5
2
2–2–
ns
tDH Data in hold time
0.8
1
1
1
ns
tDS Data in setup time
1.5
2
2
2
ns



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