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MMDF2C02HD датащи(PDF) 1 Page - ON Semiconductor

номер детали MMDF2C02HD
подробное описание детали  Power MOSFET
PDF  13 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MMDF2C02HD датащи(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 7
1
Publication Order Number:
MMDF2C02HD/D
MMDF2C02HD
Preferred Device
Power MOSFET
2 Amps, 20 Volts
Complementary SO−8, Dual
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain−to−source diode has a very low reverse recovery time.
MiniMOS
t devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc−dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls
in mass storage products such as disk drives and tape drives. The
avalanche energy is specified to eliminate the guesswork in designs
where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
Ultra Low RDS(on) Provides Higher Efficiency and Extends
Battery Life
Logic Level Gate Drive − Can Be Driven by Logic ICs
Miniature SO−8 Surface Mount Package − Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
Avalanche Energy Specified
Mounting Information for SO−8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1.)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
20
Vdc
Gate−to−Source Voltage
VGS
± 20
Vdc
Drain−to−Gate Voltage (RGS = 1.0 mΩ)
VDGR
20
Vdc
Drain Current − Continuous
N−Channel
P−Channel
− Pulsed
N−Channel
P−Channel
ID
IDM
3.8
3.3
19
20
A
Operating and Storage Temperature Range
TJ, Tstg
− 55
to 150
°C
Total Power Dissipation @ TA= 25°C (Note 2.)
PD
2.0
Watts
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 20 V, VGS = 5.0 V, Peak IL = 9.0 A,
L = 10 mH, RG = 25 Ω)N−Channel
(VDD = 20 V, VGS = 5.0 V, Peak IL = 6.0 A,
L = 18 mH, RG = 25 Ω)P−Channel
EAS
405
324
mJ
Thermal Resistance − Junction to Ambient
(Note 2.)
RθJA
62.5
°C/W
Maximum Lead Temperature for Soldering,
0.0625″ from case. Time in Solder Bath is
10 seconds.
TL
260
°C
1. Negative signs for P−Channel device omitted for clarity.
2. Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with
one die operating, 10 sec. max.
N−Source
1
2
3
4
8
7
6
5
Top View
N−Gate
P−Source
P−Gate
N−Drain
N−Drain
P−Drain
P−Drain
2 AMPERES
20 VOLTS
RDS(on) = 90 mW (N−Channel)
RDS(on) = 160 mW (P−Channel)
Device
Package
Shipping
ORDERING INFORMATION
MMDF2C02HDR2
SO−8
2500 Tape & Reel
http://onsemi.com
D
S
G
P−Channel
D
S
G
N−Channel
SO−8, Dual
CASE 751
STYLE 14
LYWW
MARKING
DIAGRAM
D2C02
D2C02 = Device Code
L
= Location Code
Y
= Year
WW
= Work Week
PIN ASSIGNMENT
1
8
Preferred devices are recommended choices for future use
and best overall value.


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