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MMDF2C02HD датащи(PDF) 7 Page - ON Semiconductor

номер детали MMDF2C02HD
подробное описание детали  Power MOSFET
PDF  13 Pages
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производитель  ONSEMI [ON Semiconductor]
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MMDF2C02HD датащи(HTML) 7 Page - ON Semiconductor

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N−Channel
P−Channel
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (Volts)
400
600
800
1200
1000
10
0
10
15
VGS
VDS
55
Ciss
Coss
Crss
200
VDS = 0 V
VGS = 0 V
Ciss
Crss
0
20
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (Volts)
400
800
1000
1400
Figure 7. Capacitance Variation
1200
10
0
101520
VGS
VDS
55
Crss
TJ = 25°C
Ciss
Coss
Crss
200
Ciss
600
VDS = 0 V
VGS = 0 V
Figure 7. Capacitance Variation
TJ = 25°C
RG, GATE RESISTANCE (OHMS)
1
10
100
1000
100
10
VDD = 10 V
ID = 2 A
VGS = 10 V
TJ = 25°C
tr
td(off)
td(on)
tf
18
15
12
9
3
0
0
10
6
2
0
QT, TOTAL GATE CHARGE (nC)
12
8
4
16
ID = 2 A
TJ = 25°C
4
VDS
VGS
QT
Q2
Q3
Q1
812
6
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
RG, GATE RESISTANCE (OHMS)
1
10
100
10
1
VDD = 10 V
ID = 3 A
VGS = 10 V
TJ = 25°C
tr
tf
td(off)
td(on)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
24
20
16
12
8
4
0
0
10
6
2
0
QT, TOTAL GATE CHARGE (nC)
12
8
4
24
68
14
ID = 3 A
TJ = 25°C
10
12
VDS
VGS
QT
Q2
Q3
Q1
100
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance



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