MMDF2C02HD datasheet(5/13 Pages) ONSEMI

номер детали	MMDF2C02HD

подробное описание детали	Power MOSFET

PDF	13 Pages

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производитель	ONSEMI [ON Semiconductor]

домашняя страница	http://www.onsemi.com

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MMDF2C02HD

http://onsemi.com

TYPICAL ELECTRICAL CHARACTERISTICS

N−Channel

P−Channel

TJ = 25°C

10 V

VGS = 4.5 V

TJ, JUNCTION TEMPERATURE (°C)

−50

100

150

0.6

VGS = 10 V

ID = 2 A

1.4

1.0

−25

125

0.8

1.6

1.2

0.04

ID, DRAIN CURRENT (AMPS)

0.20

0.08

1.0

2.0

3.0

4.0

0.16

0.12

0.5

1.5

2.5

3.5

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

0.6

0.4

0.2

123

0.2

0.4

0.6

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 3. On−Resistance versus

Gate−To−Source Voltage

ID = 1.5 A

TJ = 25°C

789

123

0.05

0.06

0.07

0.08

ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

0.6

1.2

1.4

1.6

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

TJ = 25°C

VGS = 4.5 V

VGS = 10 V

ID = 1.5 A

10 V

−50

−25

100

125

150

0.8

ID, DRAIN CURRENT (AMPS)

Figure 3. On−Resistance versus

Gate−To−Source Voltage

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

Figure 5. On−Resistance Variation with

Temperature

ID = 1 A

TJ = 25°C

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