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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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PIC16LC71 датащи(PDF) 89 Page - Microchip Technology |
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PIC16LC71 датащи(HTML) 89 Page - Microchip Technology |
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89 / 176 page  © 1997 Microchip Technology Inc. DS30272A-page 89 PIC16C71X Applicable Devices 710 71 711 715 11.0 ELECTRICAL CHARACTERISTICS FOR PIC16C710 AND PIC16C711 Absolute Maximum Ratings † Ambient temperature under bias................................................................................................................. -55 to +125˚C Storage temperature .............................................................................................................................. -65˚C to +150˚C Voltage on any pin with respect to VSS (except VDD, MCLR, and RA4).......................................... -0.3V to (VDD + 0.3V) Voltage on VDD with respect to VSS ........................................................................................................... -0.3 to +7.5V Voltage on MCLR with respect to VSS................................................................................................................0 to +14V Voltage on RA4 with respect to Vss ...................................................................................................................0 to +14V Total power dissipation (Note 1) ................................................................................................................................1.0W Maximum current out of VSS pin ...........................................................................................................................300 mA Maximum current into VDD pin ..............................................................................................................................250 mA Input clamp current, IIK (VI < 0 or VI > VDD) .....................................................................................................................± 20 mA Output clamp current, IOK (VO < 0 or VO > VDD) .............................................................................................................± 20 mA Maximum output current sunk by any I/O pin..........................................................................................................25 mA Maximum output current sourced by any I/O pin ....................................................................................................25 mA Maximum current sunk by PORTA ........................................................................................................................200 mA Maximum current sourced by PORTA ...................................................................................................................200 mA Maximum current sunk by PORTB ........................................................................................................................200 mA Maximum current sourced by PORTB...................................................................................................................200 mA Note 1: Power dissipation is calculated as follows: Pdis = VDD x {IDD - ∑ IOH} + ∑ {(VDD - VOH) x IOH} + ∑(VOl x IOL) TABLE 11-1: CROSS REFERENCE OF DEVICE SPECS FOR OSCILLATOR CONFIGURATIONS AND FREQUENCIES OF OPERATION (COMMERCIAL DEVICES) † NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. OSC PIC16C710-04 PIC16C711-04 PIC16C710-10 PIC16C711-10 PIC16C710-20 PIC16C711-20 PIC16LC710-04 PIC16LC711-04 PIC16C710/JW PIC16C711/JW RC VDD: 4.0V to 6.0V IDD: 5 mA max. at 5.5V IPD: 21 µA max. at 4V Freq:4 MHz max. VDD: 4.5V to 5.5V IDD: 2.7 mA typ. at 5.5V IPD: 1.5 µA typ. at 4V Freq: 4 MHz max. VDD: 4.5V to 5.5V IDD: 2.7 mA typ. at 5.5V IPD: 1.5 µA typ. at 4V Freq: 4 MHz max. VDD: 2.5V to 6.0V IDD: 3.8 mA typ. at 3.0V IPD: 5.0 µA typ. at 3V Freq: 4 MHz max. VDD: 4.0V to 6.0V IDD: 5 mA max. at 5.5V IPD: 21 µA max. at 4V Freq:4 MHz max. XT VDD: 4.0V to 6.0V IDD: 5 mA max. at 5.5V IPD: 21 µA max. at 4V Freq: 4 MHz max. VDD: 4.5V to 5.5V IDD: 2.7 mA typ. at 5.5V IPD: 1.5 µA typ. at 4V Freq: 4 MHz max. VDD: 4.5V to 5.5V IDD: 2.7 mA typ. at 5.5V IPD: 1.5 µA typ. at 4V Freq: 4 MHz max. VDD: 2.5V to 6.0V IDD: 3.8 mA typ. at 3.0V IPD: 5.0 µA typ. at 3V Freq: 4 MHz max. VDD: 4.0V to 6.0V IDD: 5 mA max. at 5.5V IPD: 21 µA max. at 4V Freq: 4 MHz max. HS VDD: 4.5V to 5.5V VDD: 4.5V to 5.5V VDD: 4.5V to 5.5V Not recommended for use in HS mode VDD: 4.5V to 5.5V IDD: 13.5 mA typ. at 5.5V IDD: 30 mA max. at 5.5V IDD: 30 mA max. at 5.5V IDD: 30 mA max. at 5.5V IPD: 1.5 µA typ. at 4.5V IPD: 1.5 µA typ. at 4.5V IPD: 1.5 µA typ. at 4.5V IPD: 1.5 µA typ. at 4.5V Freq: 4 MHz max. Freq: 10 MHz max. Freq:20 MHz max. Freq: 10 MHz max. LP VDD: 4.0V to 6.0V IDD: 52.5 µA typ. at 32 kHz, 4.0V IPD: 0.9 µA typ. at 4.0V Freq: 200 kHz max. Not recommended for use in LP mode Not recommended for use in LP mode VDD: 2.5V to 6.0V IDD: 48 µA max. at 32 kHz, 3.0V IPD: 5.0 µA max. at 3.0V Freq: 200 kHz max. VDD: 2.5V to 6.0V IDD: 48 µA max. at 32 kHz, 3.0V IPD: 5.0 µA max. at 3.0V Freq: 200 kHz max. |
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