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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MS75N075 датащи(PDF) 3 Page - Bruckewell Technology LTD |
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MS75N075 датащи(HTML) 3 Page - Bruckewell Technology LTD |
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3 / 4 page  MS75N75 75V N-Channel MOSFET Publication Order Number: [MS75N75] © Bruckewell Technology Corporation Rev. A -2014 Source-Drain Diode Maximum Ratings and Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units IS Continuous Source-Drain Diode Forward Current -- -- 75 A ISM ISM Pulsed Source-Drain Diode Forward Current -- -- 300 VSD Source-Drain Diode Forward Voltage IS = 75 A , VGS = 0 V -- -- 1.5 V trr Reverse Recovery Time IS = 75 A , VGS = 0 V diF/dt=100A/μs -- 90 -- ns Qrr Reverse Recovery Charge -- 250 -- μC Notes: 1. Repeativity rating : pulse width limited by junction temperature 2. L = 0.32mH, IAS =75A, VDD = 25V, RG = 25Ω , Starting TJ = 25°C 3. ISD ≤ 75A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature. |
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