MS75N75

75V N-Channel MOSFET

Publication Order Number: [MS75N75]

Features

•

RDS(on) (Max 0.017 Ω )@VGS=10V

• Gate Charge (Typical 85nC)

• Improved dv/dt Capability, High Ruggedness

• 100% Avalanche Tested

• Maximum Junction Temperature Range (175°C)

• RoHS compliant package

Packing & Order Information

50/Tube ; 1,000/Box

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MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (Tc=25°C unless otherwise specified)

Symbol

Parameter

Value

Unit

Drain-Source Voltage

75

V

Drain Current -Continuous (TC=25°C)

75

A

Drain Current -Continuous (TC=100°C)

52.5

A

Drain Current

–Pulsed

300

A

Gate-Source Voltage

±20

V

Single Pulsed Avalanche Energy

1350

mJ

Repetitive Avalanche Energy

9

mJ

dv/dt

Peak Diode Recovery dv/dt

7.0

V/ns

Power Dissipation (TC=25°C)

- Derate above 25°C

190

W

1.27

W/°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum lead temperature for soldering purposes,

1/8'' from case for 5 seconds

300

°C

●Drain current limited by maximum junction temperature