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MS75N075 датащи(PDF) 2 Page - Bruckewell Technology LTD

номер детали MS75N075
подробное описание детали  Improved dv/dt Capability, High Ruggedness
PDF  4 Pages
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производитель  BWTECH [Bruckewell Technology LTD]
домашняя страница  http://www.bruckewell-semi.com
Logo BWTECH - Bruckewell Technology LTD

MS75N075 датащи(HTML) 2 Page - Bruckewell Technology LTD

  MS75N075 Datasheet HTML 1Page - Bruckewell Technology LTD MS75N075 Datasheet HTML 2Page - Bruckewell Technology LTD MS75N075 Datasheet HTML 3Page - Bruckewell Technology LTD MS75N075 Datasheet HTML 4Page - Bruckewell Technology LTD  
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MS75N75
75V N-Channel MOSFET
Publication Order Number: [MS75N75]
© Bruckewell Technology Corporation Rev. A -2014
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
--
1.43
°C/W
RθJA
Junction-to-Ambient
--
62.5
On Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
VGS
Gate Threshold Voltage
VDS = VGS,ID = 250μA
2.0
--
4.0
V
RDS(ON)
Static Drain-Source On-Resistance
VGS = 10 V,ID = 3.75 A
--
0.014
0.017
Ω
Off Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown
Voltage
VGS = 0 V , ID = 250μA
75
--
--
V
△BV
DSS
/
△T
J
Breakdown Voltage
Temperature Coefficient
ID = 250μA, Referenced to 25°C
--
0.08
--
V/°C
IDSS
Zero Gate Voltage Drain
Current
VDS = 75 V , VGS = 0 V
VDS = 60 V , VC = 125°C
--
--
10
100
μA
IGSSF
Gate-Body Leakage
Current,Forward
VGS = 20 V , VDS = 0 V
--
--
100
μA
IGSSR
Gate-Body Leakage
Current,Reverse
VGS = -20 V , VDS = 0 V
--
--
-100
nA
Dynamic Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
CISS
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0MHz
--
3000
--
pF
COSS
Coss Output Capacitance
--
1100
--
pF
CRSS
Crss Reverse Transfer Capacitance
--
250
--
pF
Switching Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
td(on)
Turn-On Time
VDS = 37.5 V, ID = 75 A,
RG = 25 Ω
--
25
60
ns
tr
Turn-On Rise Time
--
300
700
ns
td(off)
Turn-Off Delay Time
--
150
310
ns
tf
Turn-Off Fall Time
--
180
370
ns
Qg
Total Gate Charge
VDS = 60 V,ID = 10 A,
VGS = 75 V
--
85
110
nC
Qgs
Gate-Source Charge
--
15
--
nC
Qgd
Gate-Drain Charge
--
40
--
nC



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