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STUD435S датащи(PDF) 4 Page - SamHop Microelectronics Corp.

номер детали STUD435S
подробное описание детали  Super high dense cell design for low RDS(ON).
PDF  8 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD435S датащи(HTML) 4 Page - SamHop Microelectronics Corp.

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STU435S
www.samhop.com.tw
Jul,01,2011
4
Gate-Source Voltage
Figure 7. On-Resistance vs.
-VGS, Gate-Sorce Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
-VSD, Body Diode Forward Voltage(V)
Figure 9. Capacitance
VDS, Drain-to Source Voltage(V)
Figure 10. Gate Charge
Qg, Total Gate Charge(nC)
Ver 1.0
Figure 12. Maximum Safe
-VDS, Drain-Source Voltage (V)
Operating Area
60
50
40
30
20
10
0
0
125 C
75 C
25 C
2400
2100
1800
1500
1200
900
300
10
15
20
25
30
0
5
Rg, Gate Resistance(
Ω)
Figure 11. switching characteristics
110
100
1
10
100
300
ID = 19A
10
8
6
4
2
VDS = 20V
ID =19A
0
15
10
5
0
10
8
6
4
2
35
30
25
20
600
Ciss
40
50
45
Coss
Crss
20.0
10.0
1.0
0.2
0.4
0.6
0.8
1.0
1.2
5.0
125 C
25 C
75 C
0
VDS=20V,ID=1A
VGS=10V
TD(on)
Tr
TD(off )
Tf
R
DS
(O
N)
Lim
it
0.1
1
10
100
100
10
1
0.3
VGS=-10V
Single Pulse
TA=25 C
1ms
DC
10
m
s
100
us



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