| поискавой системы для электроныых деталей |
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STUD435S датащи(PDF) 1 Page - SamHop Microelectronics Corp. |
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STUD435S датащи(HTML) 1 Page - SamHop Microelectronics Corp. |
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1 / 8 page ![]() S mHop Microelectronics C orp. a STU/D435S PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Max -40V -38A 27 @ VGS=4.5V 17.5 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. P-Channel Logic Level Enhancement Mode Field Effect Transistor www.samhop.com.tw Jul,01,2011 1 Details are subject to change without notice. G G S S STU SERIES TO - 252AA( D- PAK ) G G S S D D STD SERIES TO - 251( I - PAK ) Symbol VDS VGS IDM EAS W A PD °C 27 -55 to 150 ID Units Parameter -40 -38 -115 V V ±20 TC=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS mJ ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Limit Drain Current-Continuous -Pulsed a A Sigle Pulse Avalanche Energy c Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ, TSTG 50 °C/W Thermal Resistance, Junction-to-Ambient R JA TC=25°C 3 °C/W Thermal Resistance, Junction-to-Case R JC A TC=70°C -30.4 TC=70°C W 42 156 Gr P Pr P P Ver 1.0 |
Аналогичный номер детали - STUD435S |
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Аналогичное описание - STUD435S |
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