STUD435S datasheet(3/8 Pages) SAMHOP

номер детали	STUD435S

подробное описание детали	Super high dense cell design for low RDS(ON).

PDF	8 Pages

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производитель	SAMHOP [SamHop Microelectronics Corp.]

домашняя страница	http://www.samhop.com.tw

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STU435S

www.samhop.com.tw

Jul,01,2011

Figure 1. Output Characteristics

-VDS, Drain-to-Source Voltage (V)

Figure 2. Transfer Characteristics

-VGS, Gate-to-Source Voltage (V)

0.8

1.6

2.4

3.2

4.0

4.8

Tj=125 C

25 C

-ID, Drain Current (A)

Tj( C)

150

100

125

Tj, Junction Temperature ( C)

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

-50

-25

100 125 150

Figure 5. Gate Threshold Variation

with Temperature

Figure 6. Breakdown Voltage Variation

with Temperature

Tj, Junction Temperature ( C)

-50

-25

100 125 150

1.3

1.2

1.1

1.0

0.9

0.8

0.7

Drain Current and Temperature

Figure 4. On-Resistance Variation with

and Gate Voltage

Figure 3. On-Resistance vs. Drain Current

Ver 1.0

1.0

2.0

3.0

VGS =4.5V

VGS=10V

ID=19A

VGS=4.5V

ID=15A

0.9

1.3

1.1

1.5

1.4

1.2

1.0

VDS =VGS

ID = 250uA

VGS =3V

VGS = 3.5V

VGS =10V

VGS =4V

-55 C

VGS = 4.5V

VGS =10V

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