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STP35N10 датащи(PDF) 3 Page - SamHop Microelectronics Corp.

номер детали STP35N10
подробное описание детали  Super high dense cell design for extremely low RDS(ON).
PDF  8 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STP35N10 датащи(HTML) 3 Page - SamHop Microelectronics Corp.

  STP35N10 Datasheet HTML 1Page - SamHop Microelectronics Corp. STP35N10 Datasheet HTML 2Page - SamHop Microelectronics Corp. STP35N10 Datasheet HTML 3Page - SamHop Microelectronics Corp. STP35N10 Datasheet HTML 4Page - SamHop Microelectronics Corp. STP35N10 Datasheet HTML 5Page - SamHop Microelectronics Corp. STP35N10 Datasheet HTML 6Page - SamHop Microelectronics Corp. STP35N10 Datasheet HTML 7Page - SamHop Microelectronics Corp. STP35N10 Datasheet HTML 8Page - SamHop Microelectronics Corp.  
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www.samhop.com.tw
Apr,22,2014
3
Tj( °
C )
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
ID, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Tj, Junction Temperature(° C )
Figure 6. Breakdown Voltage Variation
with Temperature
60
48
36
24
0
0
0.5
1.0
1.5
2.0
2.5
3.0
VGS=10V
30
24
18
12
6
0
0
1.2
7.2
6.0
4.8
3.6
2.4
Tj=125 C
-55 C
25 C
90
75
60
45
30
15
1
2.5
2.2
1.9
1.6
1.3
1.0
0
0
100
75
25
50
125
150
V GS =10V
ID=17.5A
0.4
0.2
1.6
1.4
1.2
1.0
0.8
0.6
125 150
100
75
50
25
0
-25
-50
V DS =V GS
ID=250uA
1.15
1.10
1.05
1.00
0.95
0.90
0.85
125 150
100
75
50
25
0
-25
-50
ID=250uA
12
V GS =10V
VGS=5V
VGS=6V
VGS=7V
60
48
36
24
12
1
STP35N10
Ver 1.1
VGS=8V



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