STP35N10 datasheet(1/8 Pages) SAMHOP

номер детали	STP35N10

подробное описание детали	Super high dense cell design for extremely low RDS(ON).

PDF	8 Pages

Scroll/Zoom	100%

производитель	SAMHOP [SamHop Microelectronics Corp.]

домашняя страница	http://www.samhop.com.tw

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1 / 8 page

S mHop Microelectronics C orp.

a

Symbol

VDS

VGS

IDM

2

62.5

W

A

PD

°C

75

-55 to 175

ID

Units

Parameter

100

35

103

°C/W

V

±20

TC=25°C

Gate-Source Voltage

Drain-Source Voltage

THERMAL CHARACTERISTICS

°C/W

PRODUCT SUMMARY

VDSS

ID

RDS(ON) (m

Ω) Typ

100V

35A

30 @ VGS=10V

FEATURES

Super high dense cell design for extremely low RDS(ON).

High power and current handling capability.

TO-220 package.

STP S ER IE S

TO-220

S

D

G

S

G

D

N-Channel Logic Level Enhancement Mode Field Effect Transistor

ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)

Limit

Drain Current-Continuous

a

TC=25°C

-Pulsed

a

A

Maximum Power Dissipation

Operating Junction and Storage

Temperature Range

TJ, TSTG

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

R JC

R JA

www.samhop.com.tw

Apr,22,2014

1

Details are subject to change without notice.

A

29.3

TC=70°C

52.5

W

STP35N10

Ver 1.1

Green

Product

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STP35N10 датащи(PDF) 1 Page - SamHop Microelectronics Corp.

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