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STP35N10 датащи(PDF) 2 Page - SamHop Microelectronics Corp.

номер детали STP35N10
подробное описание детали  Super high dense cell design for extremely low RDS(ON).
PDF  8 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STP35N10 датащи(HTML) 2 Page - SamHop Microelectronics Corp.

  STP35N10 Datasheet HTML 1Page - SamHop Microelectronics Corp. STP35N10 Datasheet HTML 2Page - SamHop Microelectronics Corp. STP35N10 Datasheet HTML 3Page - SamHop Microelectronics Corp. STP35N10 Datasheet HTML 4Page - SamHop Microelectronics Corp. STP35N10 Datasheet HTML 5Page - SamHop Microelectronics Corp. STP35N10 Datasheet HTML 6Page - SamHop Microelectronics Corp. STP35N10 Datasheet HTML 7Page - SamHop Microelectronics Corp. STP35N10 Datasheet HTML 8Page - SamHop Microelectronics Corp.  
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background image
4 Symbol
Min
Typ
Max
Units
BVDSS
100
V
1
IGSS
±100
nA
VGS(th)
1.5
V
30
gFS
12
S
VSD
CISS
1490
pF
COSS
155
pF
CRSS
100
pF
Qg
36
nC
41
nC
Qgs
39
nC
Qgd
22
tD(ON)
19
ns
tr
2.6
ns
tD(OFF)
10
ns
tf
ns
Gate-Drain Charge
VDS=25V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=50V
ID=1A
VGS=10V
RGEN= 6 ohm
Total Gate Charge
Rise Time
Turn-Off DelayTime
VDS=50V,ID=17.5A,VGS=10V
Fall Time
Turn-On DelayTime
m ohm
VGS=10V , ID=17.5A
VDS=10V , ID=17.5A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=80V , VGS=0V
VGS= ±20V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body leakage current
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
3.5
36
b
f=1.0MHz
b
VDS=50V,ID=17.5A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS
VGS=0V,IS=5A
1.3
V
Notes
www.samhop.com.tw
2
a.Drain current limited by maximum junction temperature.
b.Guaranteed by design, not subject to production testing.
Apr,22,2014
STP35N10
Ver 1.1
2.5
0.8



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