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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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UPD70F3003A датащи(PDF) 35 Page - NEC |
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UPD70F3003A датащи(HTML) 35 Page - NEC |
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35 / 44 page  µPD70F3003A, 70F3025A 35 Data Sheet U13189EJ3V0DS00 3.2 Flash Memory Programming Mode Basic Characteristics (TA = 10 to 40 °C (when rewrifing), TA = –40 to +85°C (when not rewriting)) Parameter Symbol Conditions MIN. TYP. MAX. Unit Operating frequency fX 10 33 MHz Supply voltage VDD 4.5 5.5 V VPPL VPP low level detection –0.5 0.2 VDD V VPPM VPP, VDD level detection 0.8 VDD 1.2 VDD V VPPH VPP high voltage detection 9.7 10.3 10.6 V VDD supply current IDO 3.0 × φ + 25 mA VPP supply current IPP VPP = 10.3 V 200 mA Number of rewriteNote CWRT 20 times Note Operation is not guaranteed when rewrite is performed more than 20 times. Cautions 1. VPP pull-down resistance value (RVPP) is recommended to be in the range 5 k Ω to 15 kΩ. 2. Set the transfer rate between programmer and device as follows. CSI0 : 0.2 to 1 MHz UART0: 4800 to 76800 bps Remark φ: Internal system clock frequency |
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