| поискавой системы для электроныых деталей |
|
AN4407 датащи(PDF) 17 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
AN4407 датащи(HTML) 17 Page - STMicroelectronics |
|
17 / 19 page ![]() DocID025572 Rev 1 17/19 AN4407 Conclusions 19 3 Conclusions The introduction of the fourth (driving) pin strongly improves the dynamic performance of Power MOSFET devices, which is even more evident when the switching current levels and the output power levels are higher during both device turn-off and turn-on. The test results show that the MDmesh™ M5 technology device assembled with the driving source pin provides significant benefits when the switching current is higher than approximately 10 A at turn-off, but the advantages are present at all power levels. Different increments in efficiency were measured for different power levels, and in a market where power levels are always increasing, each small efficiency improvement represents a large advantage for energy saving systems demanded in today’s very competitive market. For our demo board, the energy saving was almost 7 W at maximum output power (2 kW). The most important benefit, however, lies in the thermal behavior: in fact, a small magnitude of power loss is translated into a difference of many degrees (around 20°C) on case temperatures for the power device. Lower working temperatures allow the use of smaller heat sinks which occupy less area on board or, more importantly, can increase the reliability of the entire system. 4 References 1. N. Mohan, T. M. Undeland, W. P. Robbins: “Power Electronics: converters, applications, and design”, Second edition, John Wiley & Sons, New York, 1995. 2. Won-suk Choi, Dong-kook Son, Markus Hallenberger and Sungmo Young"Driving and Layout Requirements for Fast Switching MOSFETs.” 3. Y. Xiao, H. Shah, T. P. Chow and R. J. Gutmann"Analytical Modeling and Experimental Evaluation of Interconnect Parasitic Inductance on MOSFET Switching Characteristics” 4. Jon Mark Hancock, "Super junction FETs Boost Efficiency in PWMs", in Power Electronics Technology, July 2005, pp. 20-29. 5. G.Sorrentino, M. Melito, F. Chimento, S. Musumeci, A. Raciti "SiC Diodes and MDmesh™ 2nd Generation Devices Improve Efficiency in PFC Applications”, Proceedings of the 4th International Conference on Integrated Power Electronics Systems, CIPS 2006, 7-9th June 2006, Napoli, Italy, pp. 195-199. 6. C. Adragna Application Note AN1792, “Design of fixed-off-time-controlled PFC pre- regulators with the L6562", STMicroelectronics, November 2003. 7. STMicroelectronics, AN2951 "3 kW fixed-off-time (FOT) power factor correction”, June 2010. |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |