| поискавой системы для электроныых деталей |
|
AN4407 датащи(PDF) 1 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
AN4407 датащи(HTML) 1 Page - STMicroelectronics |
|
1 / 19 page ![]() January 2015 DocID025572 Rev 1 1/19 AN4407 Application note Advantage of the use of an added driver source lead in discrete Power MOSFETs Antonino Gaito, Marc Laudani, Massimo Nania, Cristiano Gianluca Stella Introduction In modern power supply design, more and more attention is given to the electrical efficiency of an overall system and to the junction temperature of semiconductor devices handling all the power to be converted into a usable form. Among all the semiconductor devices, transistors are by far the most important category; almost all of them are three pin devices (MOSFET, BJT, IGBT) and, as opposed to diodes, they have a driving section which makes them more sensitive to issues related to the interaction between power to handle and input signal. Even if this document focuses on Power MOSFETs, in some cases the results could be extended to other power transistors depending on the current level to be switched and on the switching speed. The aim of this document is to illustrate the limitation related to a 3-pin device and detail the advantages of using a fourth driving source pin, also known as Kelvin source, besides the traditional power source. In a 3-pin device, during every switching (turn-on or turn-off) cycle, the stray inductance of the source wire bonding coupled with the slope of the current being interrupted always generates a voltage signal opposite to the driving signal (VGS) of a MOSFET, in our case. The effect of this opposing signal is to slow down the switching cycle, which in turn increases the cycle by cycle switching loss. The introduction of the Kelvin source pin allows separating the path of the power from that of the driving signal and to refer the driving network to the Kelvin source, where no current is supposed to flow. In this situation, it is possible to obtain a driving signal which is immune to any disturbance deriving from the verylarge and fast current variation flowing though the power path. This results in the reduction of the overall power loss in the transistor, and consequently a lower operating temperature and potentially more reliable and longer lasting power systems. www.st.com |
Аналогичный номер детали - AN4407 |
|
Аналогичное описание - AN4407 |
|
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |