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AN4407 датащи(PDF) 10 Page - STMicroelectronics

номер детали AN4407
подробное описание детали  Advantage of the use of an added driver source lead in discrete Power MOSFETs
PDF  19 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN4407 датащи(HTML) 10 Page - STMicroelectronics

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Description
AN4407
10/19
DocID025572 Rev 1
In others words, for a fixed value of Ld, (when di/dt is constant), the delay time is more and
more evident when the output power increases and the switching current level also
increases (Figure 12).
Figure 12. Relationship between stray inductance parasitic effect and current
switching duration
This theoretical situation is confirmed by experimental data during the switching instants for
both turn-off and turn-on.
1.2.1
Turn-off
If we refer to Figure 13, which shows a turn-off at high power levels, when the driver forces
VGG=0, the MOSFET is forced to turn off, but the negative extra-voltage generated over the
stray inductance introduces a turn-off delay and consequently higher turn-off switching
losses. This can even lead to false turn-on phenomena, which can further increase the turn-
off switching power dissipation.
Figure 13. Impact of the parasitic effect during the turn-off operation
GIPG271120131039FSR
GIPG271120131042FSR



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