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AN1889 датащи(PDF) 20 Page - STMicroelectronics |
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AN1889 датащи(HTML) 20 Page - STMicroelectronics |
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20 / 33 page ![]() Current transformer core selection AN1889 20/33 In Figure 10 the driving circuit as been modeled with the equivalent schematic diagram of the transformer with its secondary closed with a voltage generator. In fact, looking at Figure 9 we must note that during on time, the base of ESBT can be seen as a forward biased diode, to this we have to add the voltage drop on both diode D and resistor RB in series with the base of the ESBT to complete the secondary side load model. With these premises in a first order of analysis, the secondary side can be simply modeled as a voltage source given by: Equation 27 At primary side both primary inductance and magnetization inductance have been reported. Considering that only the IP fraction of the total collector current will be transferred to the secondary, the magnetization current has to be firstly as low as possible, secondly, its value must been taken into account for the proper calculation of transformer turn ratio. The magnetization voltage drop (that is the voltage at the primary of the current transformer) can be now easily calculate: Equation 28 The magnetization current for the two cores under analysis will be: Equation 29 and Equation 30 Being the IPmax=0.9 A in steady state, the N67 core with 2 turns at primary side must obviously be excluded, unless increasing the number of turns, but this would lead to fill all the available window area and consequently to the necessity of choosing a bigger core size. Figure 9. ESBT current transformer driver Figure 10. ESBT equivalent circuit VS V1 IC V s V BEon V D V RB 2.5V ≅ ++ = V 1 V S N 1T N 2T ---------- • 2.5 1 5 --- 0.5V = • = = I Mmax V 1TONmax L TP ---------------------------- 0.5 10.66 • 19.8 ----------------------------- 0.27 = = = For N30 I Mmax V 1TONmax L TP ---------------------------- 0.5 10.66 • 4.28 ----------------------------- 1.24 = = = For N67 |
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