Thermal Resistance

Parameter

Min. Typ. Max. Units

Test Conditions

RthJC

Junction-to-Case

—

—

0.50

K/W

RthJA

Junction-to-Ambient

—

—

48

Source-Drain Diode Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

-35

Modified MOSFET symbol showing the

ISM

Pulse Source Current (Body Diode) Œ

—

—

-140

integral reverse p-n junction rectifier.

VSD

Diode Forward Voltage

—

—

-3.3

V

trr

Reverse Recovery Time

—

—

775

ns

Tj = 25°C, IF = -35A, di/dt ≤ -100A/µs

QRR

Reverse Recovery Charge

—

—

5.0

µCVDD ≤ -50V 

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Parameter

Min.

Typ. Max. Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

-100

—

—

V

VGS = 0V, ID = -1.0 mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown

—

-0.13

—

V/°C

Reference to 25°C, ID = -1.0 mA

Voltage

RDS(on)

Static Drain-to-Source

—

—

0.087

VGS = 12V, ID = -22A

On-State Resistance

—

—

0.10

Ω

VGS = 12V, ID = -35A

VGS(th)

Gate Threshold Voltage

-2.0

—

-4.0

V

VDS = VGS, ID = -1.0 mA

gfs

Forward Transconductance

10

—

—

S ( )VDS > 15V, IDS = -22A 

IDSS

Zero Gate Voltage Drain Current

—

—

-25

VDS = 0.8 x Max Rating,VGS = 0V

—

—

-250

VDS = 0.8 x Max Rating

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

—

—

-100

VGS = -20V

IGSS

Gate-to-Source Leakage Reverse

—

—

100

VGS = +20V

Qg

Total Gate Charge

—

—

200

VGS =12V, ID = -35A

Qgs

Gate-to-Source Charge

—

—

50

VDS = Max. Rating x 0.5

Qgd

Gate-to-Drain (“Miller”) Charge

—

—

90

td(on)

Turn-On Delay Time

—

—

70

VDD = -50V, ID = -35A,

tr

Rise Time

—

—

240

RG = 2.35Ω

td(off)

Turn-Off Delay Time

—

—

220

tf

Fall Time

—

—

150

LD

Internal Drain Inductance

—

8.7

—

LS

Internal Source Inductance

—

8.7

—

Ciss

Input Capacitance

—

7000

—

VGS = 0V, VDS = -25V

Coss

Output Capacitance

—

2000

—

f = 1.0 MHz

Crss

Reverse Transfer Capacitance

—

500

—

IRHM9160 Device

Pre-Radiation



µA

nC

pF

nH

ns

Measured from the

drain lead, 6mm (0.25

in.) from package to

center of die.

Measured from the

source lead, 6mm

(0.25 in.) from package

to source bonding pad.

Modified MOSFET

symbol showing the

internal inductances.

nA

A

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