Product Summary

Part Number

IRHM9160

-100V

0.087

Ω

-35*A

Features:

s

s

Single Event Burnout (SEB) Hardened

s

Single Event Gate Rupture (SEGR) Hardened

s

Gamma Dot (Flash X-Ray) Hardened

s

Neutron Tolerant

s

Identical Pre- and Post-Electrical Test Conditions

s

Repetitive Avalanche Rating

s

Dynamic dv/dt Rating

s

Simple Drive Requirements

s

Ease of Paralleling

s

Hermetically Sealed

s

Electrically Isolated

s

Ceramic Eyelets

P-CHANNEL

RAD HARD

Provisional Data Sheet No. PD-9.1415

-100 Volt, 0.087

Ω

Ω

Ω

Ω

Ω, RAD HARD HEXFET

International Rectifier’s P-channel RAD HARD tech-

nology HEXFETs demonstrate excellent threshold

voltage stability and breakdown voltage stability at

identical pre- and post-radiation test conditions, In-

ternational Rectifier’s P-channel RAD HARD HEXFETs

Rads (Si) total dose. No compensation in gate drive

circuitry is required. These devices are also capable

of surviving transient ionization pulses as high as 1 x

within a few microseconds. Single Event Effect, (SEE),

testing of International Rectifier ’s P-channel RAD

HARD HEXFETs has demonstrated virtual immunity

to SEE failure. Since the P-channel RAD HARD pro-

cess utilizes International Rectifier’s patented HEXFET

technology, the user can expect the highest quality

and reliability in the industry.

P-channel RAD HARD HEXFET transistors also fea-

ture all of the well-established advantages of MOS-

FETs, such as voltage control, very fast switching, ease

of paralleling and temperature stability of the electri-

cal parameters.

They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, chop-

pers, audio amplifiers and high-energy pulse circuits

in space and weapons environments.

IRHM9160

REPETITIVE AVALANCHE AND dv/dt RATED

Absolute Maximum Ratings

Parameter

IRHM9160

Units

ID @ VGS = -12V, TC = 25°C Continuous Drain Current

-35*

ID @ VGS = -12V, TC = 100°C Continuous Drain Current

-22

IDM

-140

PD @ TC = 25°C

Max. Power Dissipation

250

W

Linear Derating Factor

2.0

VGS

Gate-to-Source Voltage

±20

V

EAS

500

mJ

IAR

-35

A

EAR

25

mJ

dv/dt

-5.5

V/ns

TJ

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Lead Temperature

300 (0.063 in. (1.6mm) from

case for 10 sec.)

Weight

9.3 (typical)

g

Notes: See Page 4.

D current limited by pin diameter

Pre-Radiation

A

Next Data Sheet

Index

Previous Datasheet

To Order