IRHM9160 datasheet(3/4 Pages) IRF

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Table 2. High Dose Rate

1011 Rads (Si)/sec 1012 Rads (Si)/sec

Parameter

Min. Typ Max. Min. Typ. Max.

Units

Test Conditions

VDSS

Drain-to-Source Voltage

—

-80

—

-80

Applied drain-to-source voltage

during gamma-dot

IPP

—

-100

—

-100

—

Peak radiation induced photo-current

di/dt

—

-800

—

-160

—

A/µsec Rate of rise of photo-current

0.1

—

0.5

—

µH

Circuit inductance required to limit di/dt

Table 3. Single Event Effects

LET (Si)

Fluence

Range

VDS Bias

VGS Bias

Parameter

Typ.

Units

Ion

(MeV/mg/cm2)

(ions/cm2)(

µm)

(V)

BVDSS

-100

1 x 105

~41

-100

Radiation Performance of P-Channel

Rad Hard HEXFETs

IRHM9160 Device

Radiation Characteristics

Table 1. Low Dose Rate

IRHM9160

Parameter

100K Rads (Si)

Units

Test Conditions

min.

max.

BVDSS

Drain-to-Source Breakdown Voltage

-100

—

VGS = 0V, ID = -1.0 mA

VGS(th)

Gate Threshold Voltage

-2.0

-4.0

VGS = VDS, ID = -1.0 mA

IGSS

Gate-to-Source Leakage Forward

—

-100

VGS = -20V

IGSS

Gate-to-Source Leakage Reverse

—

100

VGS = 20V

IDSS

Zero Gate Voltage Drain Current

—

-25

µAVDS = 0.8 x Max Rating, VGS = 0V

RDS(on)1

Static Drain-to-Source

—

0.087

Ω

VGS = -12V, ID = -22A

On-State Resistance One

VSD

Diode Forward Voltage

—

-3.3

TC = 25°C, IS = -35A,VGS = 0V

International Rectifier Radiation Hardened HEX-

FETs are tested to verify their hardness capability.

The hardness assurance program at International

Rectifier uses two radiation environments.

Every manufacturing lot is tested in a low dose rate

(total dose) environment per MlL-STD-750, test

method 1019. International Rectifier has imposed a

standard gate voltage of -12 volts per note 6 and a

VDSS bias condition equal to 80% of the device

rated voltage per note 7. Pre- and post-radiation

limits of the devices irradiated to 1 x 105 Rads (Si)

are identical and are presented in Table 1. The val-

ues in Table 1 will be met for either of the two low

dose rate test circuits that are used.

Both pre- and post-radiation performance are tested

and specified using the same drive circuitry and test

conditions in order to provide a direct comparison. It

should be noted that at a radiation level of 1 x 105

Rads (Si), no change in limits are specified in DC

parameters.

High dose rate testing may be done on a special

request basis, using a dose rate up to 1 x 1012 Rads

(Si)/Sec.

International Rectifier radiation hardened P-Channel

HEXFETs are considered to be neutron-tolerant, as

stated in MIL-PRF-19500 Group D. International

Rectifier P-Channel radiation hardened HEXFETs

have been characterized in heavy ion Single Event

Effects (SEE) environment and results are shown in

Table 3.

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