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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TN0985 датащи(PDF) 13 Page - STMicroelectronics |
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TN0985 датащи(HTML) 13 Page - STMicroelectronics |
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13 / 32 page  DocID024294 Rev 4 13/32 TN0985 Procedure 32 2.3 Radiation The radiation guarantee depends on the product series: • M54HCMOS series: each wafer is tested to a total dose of 50 krad according to the ESCC 22900. The corresponding radiation verification test (RVT) report is included in the documentation provided with each shipment. • CMOS4000B series: each wafer lot is tested to a total dose of 100 krad according to the ST internal specification. The corresponding RVT report is included in the documentation provided with each shipment. 2.4 Marking The devices are marked as follows (see also Figure 3): • Date code/ST logo/country of origin (e.g. FR = France) • ESCC detailed specification number + specific variant as shown in Table 7. Table 6. Parameter drift values Characteristic Symbols Limits Units Drift value Absolute Min. Max. Threshold voltage N-channel VTHn ±0.4 -0.7 -3 V Threshold voltage P-channel VTHp 0.7 3 Table 7. Variant table Package Gold finish Hot solder dipped Flat 21 23 |
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