6-26

File Number

2836.4

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

RFD3N08L, RFD3N08LSM

3A, 80V, 0.800 Ohm, Logic Level,

N-Channel Power MOSFETs

The RFD3N08L and RFD3N08LSM are N-Channel

enhancement mode silicon gate power field effect transistors

specifically designed for use with logic level (5V) driving

sources in applications such as programmable controllers,

automotive switching, and solenoid drivers. This

performance is accomplished through a special gate oxide

design which provides full rated conductance at gate biases

in the 3V to 5V range, thereby facilitating true on-off power

control directly from logic circuit supply voltages.

Formerly developmental type TA09922.

Features

• 3A, 80V

• On Resistance vs Gate Drive Voltage Curves

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFD3N08L

TO-251AA

F3N08L

RFD3N08LSM

TO-252AA

F3N08L

NOTE: When ordering, include the entire part number. Add the suffix 9A

to obtain the TO-252AA variant in tape and reel, i.e. RFD3N08LSM9A

G

D

S

JEDEC TO-251AA

JEDEC TO-252AA

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

GATE

SOURCE

DRAIN

(FLANGE)

Data Sheet

July 1999