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RFD3N08LSM датащи(PDF) 7 Page - Intersil Corporation |
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RFD3N08LSM датащи(HTML) 7 Page - Intersil Corporation |
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7 / 8 page ![]() 6-32 PSPICE Electrical Model SUBCKT RFD3N08L 2 1 3 ; rev 5/10/95 CA 12 8 4.10e-10 CB 15 14 3.25e-10 CIN 6 8 1.10e-10 DBODY 7 5 DBDMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 93.57 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTHRESH 6 21 19 8 1 EZTEMPCO 20 6 18 22 1 IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 5.8e-9 LSOURCE 3 7 5.8e-9 MOS1 16 6 8 8 MSTRONG M = 0.80 MOS2 16 21 8 8 MWEAK M = 0.20 RBREAK 17 18 RBREAKMOD 1 RDRAIN 50 16 RDRAINMOD 174.2e-3 RGATE 9 20 24.9 RIN 6 8 1e9 RLDRAIN 2 5 10 RLGATE 1 9 58 RLSOURCE 3 7 58 RSCL1 5 51 RSCLMOD 1e-6 RSCL2 5 50 1e3 RSOURCE 8 7 RSOURCEMOD 200.2e-3 RTHRESH 22 8 RTHRESHMOD 1 RZTEMPCO 18 19 RZTEMPCOMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 22 19 DC 1 ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*10),6))} .MODEL DBDMOD D (IS = 9.90e-14 RS = 6.00e-2 TRS1 = 1.42e-3 TRS2 = -3.58e-6 CJO = 1.40e-10 TT = 5.75e-8 M = 0.4) .MODEL DBREAKMOD D (RS = 2.32 TRS1 = 1.03e-3 TRS2 = -6.17e-11) .MODEL DPLCAPMOD D (CJO = 1.13e-10 IS = 1e-30 N = 10 M=0.6) .MODEL MSTRONG NMOS (VTO = 1.773 KP = 1.70 IS = 1e-30 N = 10 TOX = 1L = 1u W = 1u) .MODEL MWEAK NMOS (VTO = 1.496 KP = 2.09 IS = 1e-30 N = 10 TOX = 1L = 1u W = 1u) .MODEL RBREAKMOD RES (TC1 = 8.19e-4 TC2 = 5.9e-7) .MODEL RDRAINMOD RES (TC1 = 1.55e-2 TC2 = 8.58e-5) .MODEL RDSOURCEMOD RES (TC1 = 0 TC2 = 0) .MODEL RSCLMOD RES (TC1 = 0 TC2 = 0) .MODEL RTHRESHMOD RES (TC1 = -5.0e-4 TC2 = -6.0e-6) .MODEL RZTEMPCOMOD RES (TC1 = -1.19e-3 TC2 = 1.12e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.2 VOFF= -3.2) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.2 VOFF= -5.2) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.60 VOFF= 4.4) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 4.4 VOFF= -0.60) .ENDS NOTE: 1. For further discussion of the PSPICE model, consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991. 1 GATE LGATE RGATE EZTEMPCO + 12 13 8 14 13 13 15 S1A S1B S2A S2B CA CB EGS EDS RIN CIN MOS1 MOS2 DBREAK EBREAK DBODY LDRAIN DRAIN RSOURCE LSOURCE SOURCE RBREAK RZTEMPCO VBAT IT EVTHRESH ESG DPLCAP 6 6 8 10 5 16 21 11 17 18 8 14 5 8 6 8 7 3 17 18 2 + + + + + + 20 9 RLGATE RLSOURCE RLDRAIN 19 22 19 8 18 22 RTHRESH RDRAIN ESCL RSCL1 RSCL2 51 50 5 51 + RFD3N08L, RFD3N08LSM |
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