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RFD3N08LSM датащи(PDF) 5 Page - Intersil Corporation

номер детали RFD3N08LSM
подробное описание детали  3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs
PDF  8 Pages
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производитель  INTERSIL [Intersil Corporation]
домашняя страница  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

RFD3N08LSM датащи(HTML) 5 Page - Intersil Corporation

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6-30
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 13. SWITCHING TIME vs GATE RESISTANCE
FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 15. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves Unless Otherwise Specified (Continued)
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (
oC)
200
2.0
1.5
1.0
0.5
0
ID = 250µA
20
20
30
40
50
0
60
40
0
10
RGS, GATE TO SOURCE RESISTANCE (Ω)
td(ON)
tr
tf
80
td(OFF)
100
VDD = 40V, ID = 3A, RL = 13.3Ω
180
0
0
5
10
15
20
25
CRSS
30
COSS
VDS, DRAIN TO SOURCE VOLTAGE (V)
150
120
60
90
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
80
60
40
20
0
5.00
3.75
2.50
1.25
0
RL = 26.67Ω
IG(REF) = 0.1mA
VGS = 5V
PLATEAU VOLTAGES IN
DESCENDING ORDER:
VDD = BVDSS
VDD = 0.75 BVDSS
VDD = 0.50 BVDSS
VDD = 0.25BVDSS
IG(REF)
IG(ACT)
20
IG(REF)
IG(ACT)
80
t, TIME (
µs)
tP
VGS
0.01
Ω
L
IAS
+
-
VDS
VDD
RG
DUT
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VDD
VDS
BVDSS
tP
IAS
tAV
0
RFD3N08L, RFD3N08LSM



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