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IMC010FLSA датащи(PDF) 3 Page - Intel Corporation

номер детали IMC010FLSA
подробное описание детали  SERIES 2 FLASH MEMORY CARDS iMC002FLSA, iMC004FLSA, iMC010FLSA, iMC020FLSA
PDF  39 Pages
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производитель  INTEL [Intel Corporation]
домашняя страница  http://www.intel.com
Logo INTEL - Intel Corporation

IMC010FLSA датащи(HTML) 3 Page - Intel Corporation

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SERIES 2 FLASH MEMORY CARDS
Table 2 Series 2 Flash Memory Card Pin Descriptions
Symbol
Type
Name and Function
A0–A25
I
ADDRESS INPUTS
A0 through A25 are address bus lines which enable direct
addressing of 64 megabytes of memory on a card A0 is not used in word
access mode A24 is the most significant address bit Note A25 is a no-connect
but should be provided on host side
DQ0–DQ15
IO
DATA INPUTOUTPUT
DQ0 through DQ15 constitute the bidirectional data
bus DQ15 is the most significant bit
CE1
CE2
I
CARD ENABLE 1 2
CE1
enables even bytes CE2
enables odd bytes
Multiplexing A0 CE1
and CE2
allows 8-bit hosts to access all data on DQ0
through DQ7 (See Table 3 for a more detailed description)
OE
I
OUTPUT ENABLE
Active low signal gating read data from the memory card
WE
I
WRITE ENABLE
Active low signal gating write data to the memory card
RDYBSY
O
READYBUSY OUTPUT
Indicates status of internally timed erase or write
activities A high output indicates the memory card is ready to accept
accesses A low output indicates that a device(s) in the memory card is(are)
busy with internally timed activities See text for an alternate function (READY-
BUSY MODE REGISTER)
CD1
CD2
O
CARD DETECT 1 2
These signals provide for correct card insertion detection
They are positioned at opposite ends of the card to detect proper alignment
The signals are connected to ground internally on the memory card and will be
forced low whenever a card is placed in the socket The host socket interface
circuitry shall supply 10K or larger pull-up resistors on these signal pins
WP
O
WRITE PROTECT
Write Protect reflects the status of the Write-Protect switch
on the memory card WP set high e write protected providing internal
hardware write lockout to the flash array
VPP1 VPP2
WRITEERASE POWER SUPPLY
(12V nominal) for erasing memory array
blocks or writing data in the array They must be 12V to perform an erasewrite
operation
VCC
CARD POWER SUPPLY
(5V nominal) for all internal circuitry
GND
I
GROUND
for all internal circuitry
REG
I
REGISTER SELECT
provides access to Series 2 Flash Memory Card registers
and Card Information Structure in the Attribute Memory Plane
RST
I
RESET
from system active high Places card in Power-On Default State
RESET pulse width must be t 200 ns
WAIT
O
WAIT (Extend Bus Cycle)
is used by Intel’s IO cards and is driven high
BVD1 BVD2
O
BATTERY VOLTAGE DETECT
Upon completion of the power on reset cycle
these signals are driven high to maintain SRAM-card compatibility
RFU
RESERVED FOR FUTURE USE
NC
NO INTERNAL CONNECTION
Pin may be driven or left floating
VS1 VS2
VOLTAGE SENSE
Notifies the host Socket of the card’s VCC requirements
VS1 and VS2 are both open indicating a 5V VCC card
3



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