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IMC010FLSA датащи(PDF) 27 Page - Intel Corporation |
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IMC010FLSA датащи(HTML) 27 Page - Intel Corporation |
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27 / 39 page ![]() SERIES 2 FLASH MEMORY CARDS OPERATING SPECIFICATlONS ABSOLUTE MAXIMUM RATINGS Storage Temperature b 40 Cto a85 C Voltage on Any Pin with Respect to Ground b 20V to VCC a 20V(1) VPP1 VPP2 Supply Voltage with Respect to Ground b 20V to a140V(1 2) VCC Supply Voltage with Respect to Ground b 05V to a70V NOTICE This data sheet contains preliminary infor- mation on new products in production The specifica- tions are subject to change without notice Verify with your local Intel Sales office that you have the latest data sheet before finalizing a design WARNING Stressing the device beyond the ‘‘Absolute Maximum Ratings’’ may cause permanent damage These are stress ratings only Operation beyond the ‘‘Operating Conditions’’ is not recommended and ex- tended exposure beyond the ‘‘Operating Conditions’’ may affect device reliability NOTES 1 Minimum DC input voltage is b05V During transitions inputs may undershoot to b20V tor periods of less than 20 ns Maximum DC voltage on output pins is VCC a 05V The voltage may overshoot to VCC a 20V for periods of less than 20 ns 2 Maximum DC input voltage on VPP1 VPP2 may overshoot to a140V for periods of less than 20 ns COMMERCIAL TEMPERATURE OPERATING CONDITIONS These operating conditions apply to commercial temperature devices Symbol Parameter Min Max Unit TA Operating Temperature 0 70 C VCC VCC Supply Voltage (5%) 475 525 V EXTENDED TEMPERATURE OPERATING CONDITIONS These operating conditions apply to extended temperature devices Symbol Parameter Min Max Unit TA Operating Temperature b 40 85 C VCC VCC Supply Voltage (5%) 475 525 V CHARACTERISTICS All AC and DC characteristics apply to both commercial and extended temperature devices COMMON DC CHARACTERISTICS CMOS and TTL Symbol Parameter Notes Min Typ Max Unit Test Condition ILI Input Leakage Current 1 3 g 1 g 20 m AVCC e VCC Max VIN e VCC or GND ILO Output Leakage Current 1 g 1 g 20 m AVCC e VCC Max VOUT e VCC or GND VIL Input Low Voltage 1 b 05 08 V VIH Input High Voltage (TTL) 1 24 VCC a 03 V Input High Voltage (CMOS) 07 VCC VCC a 03 VOL Output Low Voltage 1 VSS 04 V VCC e VCC Min IOL e 32 mA VOH Output High Voltage 1 40 VCC VVCC e VCC Min IOH eb20 mA VPPL VPP during Read Only Operations 1 2 00 65 V VPPH VPP during ReadWrite Operations 1 114 126 V VLKO VCC EraseWrite Lock Voltage 1 20 V NOTES 1 Values are the same for byte and word wide modes and for all card densities 2 Block ErasesData Writes are inhibited when VPP e VPPL and not guaranteed in the range between VPPH and VPPL 3 Exceptions With VIN e GND the leakage on CE1 CE2 REG OE WE will be s 500 mA due to internal pullup resistors and with VIN e VCC RST leakage will be s 500 mA due to internal pulldown resistor 27 |
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