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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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GMS81C2012 датащи(PDF) 19 Page - Hynix Semiconductor |
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GMS81C2012 датащи(HTML) 19 Page - Hynix Semiconductor |
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19 / 107 page  HYUNDAI MicroElectronics GMS81C2012/GMS81C2020 MAR. 2000 Ver 1.00 19 7.4 DC Electrical Characteristics for Standard Pins(5V) (VDD = 5.0V ± 10%, VSS = 0V, TA = -40 ~ 85°C, fXIN = 4 MHz, Vdisp = VDD-40V to VDD), Parameter Pin Symbol Test Condition Specification Unit Min Typ.1 1. Data in “Typ.” column is at 4.5V, 25 °C unless otherwise stated. These parameters are for design guidance only and are not tested. Max Input High Voltage XIN, SXIN VIH1 External Clock 0.9VDD VDD+0.3 V RESET,SIN,R55,SCLK, INT0&1,EC0 VIH2 0.8VDD VDD+0.3 R40~R43,R5,R6,R70~R73 VIH3 0.7VDD VDD+0.3 Input Low Voltage XIN, SXIN VIL1 External Clock -0.3 0.1VDD V RESET,SIN,R55,SCLK, INT0&1,EC0 VIL2 -0.3 0.2VDD R40~R43,R5,R6,R70~R73 VIL3 -0.3 0.3VDD Output High Voltage R40~R43,R5,R6,R70~R73 BUZO,T0O,PWM1O/T1O, SCLK,SOUT VOH IOH = -0.5mA VDD-0.5 V Output Low Voltage R40~R43,R5,R6,R70~R73 BUZO,T0O,PWM1O/T1O, SCLK,SOUT VOL1 VOL2 IOL = 1.6mA IOL = 10mA 0.4 2 V Input High Leakage Current R40~R43,R5,R6,R70~R73 IIH1 1 uA XIN IIH2 1 Input Low Leakage Current R40~R43,R5,R6,R70~R73 IIL1 -1 uA XIN IIL2 -1 Input Pull-up Current(*Option) R40~R43,R5,R6,R70~R73 IPU 50 100 180 uA Power Fail Detect Voltage VDD VPFD 2.7 V Current dissipation in active mode VDD IDD fXIN=4.5MHz 8 mA Current dissipation in standby mode VDD ISTBY fXIN=4.5MHz 3 mA Current dissipation in sub-active mode VDD ISUB fXIN = Off fSXIN=32.7KHz 100 uA Current dissipation in watch mode VDD IWTC fXIN=Off fSXNI=32.7KHz 20 uA Current dissipation in stop mode VDD ISTOP fXIN=Off fSXIN=32.7KHz 10 uA Hysteresis RESET,SIN,R55,SCLK, INT0,INT1,EC0 VT+~VT- 0.4 V Internal RC WDT Frequency XOUT TRCWDT 830 KHz RC Oscillation Frequency XOUT fRCOSC R= 120K Ω 1.522.5 MHz |
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