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STGW50H60DF датащи(PDF) 4 Page - STMicroelectronics

номер детали STGW50H60DF
подробное описание детали  50 A, 600 V field stop trench gate IGBT with Ultrafast diode
PDF  12 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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Electrical characteristics
STGW50H60DF
4/12
Doc ID 018673 Rev 5
Table 7.
Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Eon (1)
Eoff
(2)
Ets
1.
Eon is the turn-on losses when a typical diode is used in the test circuit in
Figure 20. If the IGBT is offered
in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the
same temperature (25 °C and 125 °C).
2.
Turn-off losses include also the tail of the collector current.
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCE = 400 V, IC = 50 A,
RG = 10 Ω, VGE = 15 V
-
0.89
0.86
1.75
-
mJ
mJ
mJ
Eon (1)
Eoff
(2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCE = 400 V, IC = 50 A,
RG = 10 Ω, VGE = 15 V
TJ = 125 °C
-
1.24
1.15
2.39
-
mJ
mJ
mJ
Table 8.
Collector-emitter diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VF
Forward on-voltage
IF = 30 A
IF = 30 A, TJ = 125 °C
-
2
1.65
2.5
V
V
trr
Qrr
Irrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IF = 30 A,VR = 50 V,
di/dt = 100 A/µs
-
55
110
3
-
ns
nC
A
trr
Qrr
Irrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IF = 30 A,VR = 50 V,
di/dt = 100 A/µs
, TJ =125 °C
-
140
400
5.5
-
ns
nC
A



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