STGW50H60DF datasheet(7/12 Pages) STMICROELECTRONICS

номер детали	STGW50H60DF

подробное описание детали	50 A, 600 V field stop trench gate IGBT with Ultrafast diode

PDF	12 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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7 / 12 page

STGW50H60DF

Electrical characteristics

Doc ID 018673 Rev 5

7/12

Figure 14.

Turn-OFF SOA

Figure 15.

Short circuit time & current vs. VGE

Figure 16.

Diode forward current vs. forward

voltage

Figure 17.

Diode forward current vs. junction

temperature

Figure 18.

Maximum normalized Zth junction

to case (IGBT)

Figure 19.

Maximum normalized Zth junction

to case (Diode)

AM11841v1

0.01

0.1

100

0.1

100

IC (A)

VCE (V)

VGE = 15 V, RG = 10Ω

TC = 150 °C

AM11842v1

150

250

350

2.5

7.5

12.5

17.5

101112131415

ISC (A)

tsc (μs)

VGE (V)

VCC= 400V,

TC = 25°C

tSC

ISC

AM11843v1

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

VF (V)

IF (A)

TJ = -40°C

TJ = 25°C

TJ = 150°C

AM11844v1

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

-50

-25

100

125

VF (V)

TJ (ºC)

IF = 60A

IF = 30A

IF = 15A

AM11845v1

1E-02

1E-01

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

tP (s)

Single

Pulse

D=0.01

D=0.02

D=0.05

D=0.1

D=0.2

D=0.5

AM11846v1

1.E-02

1.E-01

1.E+00

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

tP (s)

Single

Pulse

D=0.01

D=0.02

D=0.05

D=0.1

D=0.2

D=0.5

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