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STGW50H60DF датащи(PDF) 1 Page - STMicroelectronics |
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STGW50H60DF датащи(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() This is information on a product in full production. July 2012 Doc ID 018673 Rev 5 1/12 12 STGW50H60DF 50 A, 600 V field stop trench gate IGBT with Ultrafast diode Datasheet − production data Features ■ High speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ Ultrafast soft recovery antiparallel diode ■ Lead free package Applications ■ Photovoltaic inverters ■ Uninterruptible power supply ■ Welding ■ Power factor correction ■ High switching frequency converters Description Using advanced proprietary trench gate and field stop structure, this IGBT leads to an optimized compromise between conduction and switching losses maximizing the efficiency for high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and a very tight parameter distribution result in an easier paralleling operation. Figure 1. Internal schematic diagram TO-247 1 2 3 Table 1. Device summary Order code Marking Package Packaging STGW50H60DF GW50H60DF TO-247 Tube www.st.com |
Аналогичный номер детали - STGW50H60DF |
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Аналогичное описание - STGW50H60DF |
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