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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AT45DB321E датащи(PDF) 1 Page - List of Unclassifed Manufacturers |
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AT45DB321E датащи(HTML) 1 Page - List of Unclassifed Manufacturers |
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1 / 73 page  8784F–DFLASH–11/2013 Features Single 2.3V - 3.6V supply Serial Peripheral Interface (SPI) compatible Supports SPI modes 0 and 3 Supports RapidS™ operation Continuous read capability through entire array Up to 85MHz Low-power read option up to 15MHz Clock-to-output time (tV) of 6ns maximum User configurable page size 512 bytes per page 528 bytes per page (default) Page size can be factory pre-configured for 512 bytes Two fully independent SRAM data buffers (512/528 bytes) Flexible programming options Byte/Page Program (1 to 512/528 bytes) directly into main memory Buffer Write Buffer to Main Memory Page Program Flexible erase options Page Erase (512/528 bytes) Block Erase (4KB) Sector Erase (64KB) Chip Erase (32-Mbits) Program and Erase Suspend/Resume Advanced hardware and software data protection features Individual sector protection Individual sector lockdown to make any sector permanently read-only 128-byte, One-Time Programmable (OTP) Security Register 64 bytes factory programmed with a unique identifier 64 bytes user programmable Hardware and software controlled reset options JEDEC Standard Manufacturer and Device ID Read Low-power dissipation 400nA Ultra-Deep Power-Down current (typical) 3μA Deep Power-Down current (typical) 25μA Standby current (typical) 11mA Active Read current (typical) Endurance: 100,000 program/erase cycles per page minimum Data retention: 20 years Green (Pb/Halide-free/RoHS compliant) packaging options 8-lead SOIC (0.208" wide) 8-pad Ultra-thin DFN (5 x 6 x 0.6mm) 9-ball Ultra-thin UBGA (6 x 6 x 0.6mm) AT45DB321E 32-Mbit DataFlash (with Extra 1-Mbits), 2.3V Minimum SPI Serial Flash Memory |
Аналогичный номер детали - AT45DB321E |
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Аналогичное описание - AT45DB321E |
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