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AT45DB321D датащи(PDF) 9 Page - List of Unclassifed Manufacturers

номер детали AT45DB321D
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производитель  ETC2 [List of Unclassifed Manufacturers]
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AT45DB321D датащи(HTML) 9 Page - List of Unclassifed Manufacturers

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AT45DB321D [DATASHEET]
3597T–DFLASH–11/2013
Table 5-2.
Sector Erase Addressing
5.7
Chip Erase(1)
The entire main memory can be erased at one time by using the chip erase command.
To execute the chip erase command, a four-byte command sequence, C7H, 94H, 80H, and 9AH, must be clocked into the
device. Since the entire memory array is to be erased, no address bytes need to be clocked into the device, and any data
clocked in after the opcode will be ignored. After the last bit of the opcode sequence has been clocked in, the CS pin can be
deasserted to start the erase process. The erase operation is internally self-timed, and should take place in a time of tCE. During
this time, the status register will indicate that the device is busy.
The chip erase command will not affect sectors that are protected or locked down; the contents of those sectors will remain
unchanged. Only those sectors that are not protected or locked down will be erased.
Note:
1.
Refer to the errata regarding chip erase on page 50.
The WP pin can be asserted while the device is erasing, but protection will not be activated until the internal erase cycle
completes.
Table 5-3.
Chip Erase Command
Command
Byte 1
Byte 2
Byte 3
Byte 4
Figure 5-1. Chip Erase
Note:
1.
Refer to the errata regarding chip erase on page 50.
PA12/
A21
PA11/
A20
PA10/
A19
PA9/
A18
PA8/
A17
PA7/
A16
PA6/
A15
PA5/
A14
PA4/
A13
PA3/
A12
PA2/
A11
PA1/
A10
PA0/
A9
Sector
0
0
0
0
0
0
0
0
0
0
X
X
X
0a
0
0
0
0
0
0
0
0
0
1
X
X
X
0b
0
0
0
0
0
1
X
X
X
X
X
X
X
1
0
0
0
0
1
0
X
X
X
X
X
X
X
2
1
1
1
1
0
0
X
X
X
X
X
X
X
60
1
1
1
1
0
1
X
X
X
X
X
X
X
61
1
1
1
1
1
0
X
X
X
X
X
X
X
62
1
1
1
1
1
1
X
X
X
X
X
X
X
63
Chip erase
C7H
94H
80H
9AH
Opcode
Byte 1
Opcode
Byte 2
Opcode
Byte 3
Opcode
Byte 4
CS
Each transition
represents 8 bits
SI



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