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AT25DF321A датащи(PDF) 4 Page - List of Unclassifed Manufacturers |
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AT25DF321A датащи(HTML) 4 Page - List of Unclassifed Manufacturers |
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4 / 53 page ![]() 4 3686F–DFLASH–1/2014 AT25DF321A 3. Block Diagram Figure 3-1. Block Diagram 4. Memory Array To provide the greatest flexibility, the memory array of the AT25DF321A can be erased in four levels of granularity including a full chip erase. In addition, the array has been divided into physical sectors of uniform size, of which each sector can be individually protected from program and erase operations. The size of the physical sectors is optimized for both code and data storage applications, allowing both code and data segments to reside in their own isolated regions. The Memory Architecture Diagram illustrates the breakdown of each erase level as well as the breakdown of each physical sector. Figure 2-1. 8-SOIC (Top View) Figure 2-2. 8-UDFN (Top View) Figure 2-3. 9-UBGA (Top View) CS SO (SOI) WP GND 1 2 3 4 8 7 6 5 VCC HOLD SCK SI (SIO) SCK GND VCC WP NC CS SO SI HOLD FLASH MEMORY ARRAY Y-GATING CS SCK SO (SOI) SI (SIO) Y-DECODER X-DECODER I/O BUFFERS AND LATCHES CONTROL AND PROTECTION LOGIC SRAM DATA BUFFER WP INTERFACE CONTROL AND LOGIC HOLD CS SO (SOI) WP GND 1 2 3 4 8 7 6 5 VCC HOLD SCK SI (SIO) |
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