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GP1600FSM12 датащи(PDF) 4 Page - Dynex Semiconductor

номер детали GP1600FSM12
подробное описание детали  Single Switch IGBT Module Advance Information
PDF  10 Pages
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производитель  DYNEX [Dynex Semiconductor]
домашняя страница  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

GP1600FSM12 датащи(HTML) 4 Page - Dynex Semiconductor

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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
INDUCTIVE SWITCHING CHARACTERISTICS
Symbol
t
d(off)
Turn-off delay time
Fall time
E
OFF
Turn-off energy loss
Conditions
ns
ns
mJ
1800
250
450
350
200
-
-
-
Parameter
Min.
Typ.
Max.
Units
1650
t
f
t
d(on)
Turn-on delay time
ns
1750
-
1600
Rise time
E
ON
Turn-on energy loss
ns
mJ
550
200
160
450
-
-
t
r
I
C = 1600A
V
GE = ±15V
V
CE = 600
R
G(ON) = RG(OFF) = 3.3Ω
L ~ 100nH
T
case =
125˚C unless stated otherwise.
T
case = 25˚C unless stated otherwise
Q
rr
Diode reverse recovery charge
µC
130
100
-
Q
rr
Diode reverse recovery charge
µC
-
170
-
I
F = 1600A
V
R = 50%VCES,
dI
F/dt = 2000A/µs
t
d(off)
Turn-off delay time
Fall time
E
OFF
Turn-off energy loss
ns
ns
mJ
2100
300
500
400
250
-
-
-
1900
t
f
t
d(on)
Turn-on delay time
ns
2000
-
1750
Rise time
E
ON
Turn-on energy loss
ns
mJ
550
350
250
500
-
-
t
r
I
C = 1600A
V
GE = ±15V
V
CE = 600
R
G(ON) = RG(OFF) = 3.3Ω
L ~ 100nH
Q
rr
Diode reverse recovery charge
µC
350
250
-
Q
rr
Diode reverse recovery charge
µC
-
225
-
I
F = 1600A
V
R = 50%VCES,
dI
F/dt = 2000A/µs



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