GP1600FSM12

2/10

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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THERMAL AND MECHANICAL RATINGS

Symbol

Conditions

DC junction to case

9

Max.

-

Min.

Parameter

Units

R

th(j-c)

Thermal resistance - transistor

T

stg

Storage temperature range

Transistor

150

125

-

–40

R

th(c-h)

Thermal resistance - Case to heatsink

(per module)

Mounting torque 5Nm

(with mounting grease)

8

-

-

Mounting - M6

Nm

5

-

-

T

j

Junction temperature

Screw torque

Diode

125

-

Electrical connections - M4

Nm

2

-

Electrical connections - M8

Nm

10

-

Thermal resistance - diode

DC junction to case

20

-

-

R

th(j-c)

V

CES

Collector-emitter voltage

-

Test Conditions

Symbol

I

C

Gate-emitter voltage

V

1200

Units

V

±20

Max.

Parameter

Collector current

13.9

Maximum power dissipation

P

max

Commoned terminals to base plate.

AC RMS, 1 min, 50Hz

Isolation voltage

V

isol

V

2500

V

V

GES

I

CM

kW

T

ABSOLUTE MAXIMUM RATINGS

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme

conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety

precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

T

DC, T

1600

A

1ms, T

A

3200