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AS3517H-ECTP датащи(PDF) 45 Page - ams AG |
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AS3517H-ECTP датащи(HTML) 45 Page - ams AG |
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45 / 94 page ![]() AS3517 V17 Data Sheet, Confidential © 2003-2007, austriamicrosystems AG, 8141 Unterpremstaetten, Austria-Europe. All Rights Reserved. www.austriamicrosystems.com VBUS Charge Pump (USB OTG Supply) With the pin USBH_CSN and USBH_CSP connected to ground the USB-OTG mode is selected. In this mode the charge pump supplies 5V and 8mA. The charge pump uses the QLDO2 voltage as input and doubles its voltage with the help of the flying capacitor between CP_CP and CN_GEXT to its output VBUS. If the pulse skip bit is set in the related register, the charge pump switches to pulse skip mode for improved efficiency. Enabled pulse skip mode, however, compromises with a higher output voltage ripple. Figure 28 VBUS CP Block Diagram Parameter Table 34 VBUS Generation Parameter Symbol Parameter Min Typ Max Unit Note CP Mode ICPOUT Output Current 8 mA @ 4.7V output voltage IVDD Quiescent Current 600 µA VCPOUT Output Voltage 4.7 5.0 5.3 V CFLY=100nF,ICPOUT=0..8mA FIN Switching frequency 375 kHz CFLY External flying capacitor 100 nF ceramic, low ESR capacitor between CP_CP and CN_GEXT CSTORE External storage capacitor 1 2.2 uF ceramic, low ESR capacitor between VBUS and VSS DCDC Mode IVDD Quiescent Current 140 µA Pulse Skipping mode VRsense_max Current Limit at Rsense 100 mV e.g.: 1A for 0.1 Ohm sense resistor ILOAD Load Current 0 500 mA @ 5V output voltage fIN Fixed Switching Frequency 750 KHz tMIN_ON Minimum On-Time 130 ns MDC Maximum Duty Cycle 91 % COUT Output Capacitor 4.7 µF Ceramic, +/-20% L Inductor 10 µH Use inductors with small CPARASITIC (<100pF) for high efficiency NSW NMOS switch ON-resistance of external switching transistor max. 1 Ω PSW PMOS switch ON-resistance of external PMOS transistor as low as possible, because of efficiency Rsense Current Limit Sense Resistor 100 mΩ e.g.: 1A for 0.1 Ohm sense resistor BVDD=3.3V, TA=25°C, unless otherwise specified Revision 1v3 44 - 93 |
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