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STP190N55LF3 датащи(PDF) 5 Page - STMicroelectronics

номер детали STP190N55LF3
подробное описание детали  N-channel 55 V, 2.9 miliohm, 120 A, TO-220
PDF  12 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP190N55LF3 датащи(HTML) 5 Page - STMicroelectronics

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STP190N55LF3
Electrical characteristics
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Table 6.
Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD= 27.5 V, ID= 60 A,
RG=4.7 Ω, VGS=10 V
(see Figure 15),
(see Figure 18)
20
40
ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD= 27.5 V, ID= 60 A,
RG=4.7 Ω, VGS=10 V
(see Figure 15),
(see Figure 18)
160
40
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
Source-drain current
Source-drain current (pulsed)(1)
1.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
120
480
A
A
VSD
Forward on voltage
ISD= 120 A, VGS=0
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 120 A,
di/dt = 100A/µs,
VDD= 35 V, Tj= 150 °C
(see Figure 17)
50
90
3.6
ns
nC
A



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