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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STP190N55LF3 датащи(PDF) 3 Page - STMicroelectronics |
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STP190N55LF3 датащи(HTML) 3 Page - STMicroelectronics |
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3 / 12 page  STP190N55LF3 Electrical ratings 3/12 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS=0) 55 V VGS Gate-Source voltage ± 18 V ID (1) 1. Current limited by package Drain current (continuous) at TC = 25 °C 120 A ID (1) Drain current (continuous) at TC = 100 °C 120 A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 480 A PTOT Total dissipation at TC = 25 °C 312 W Derating factor 2.08 W/°C EAS (3) 3. Starting Tj = 25 °C, ID = 60 A, VDD = 40 V Single pulse avalanche energy 1000 mJ Tstg Storage temperature -55 to 175 °C Tj Max. operating junction temperature 175 °C Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 0.48 °C/W Rthj-a Thermal resistance junction-ambient max 62.5 °C/W TL Maximum lead temperature for soldering purpose 300 °C |
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