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STP190N55LF3 датащи(PDF) 4 Page - STMicroelectronics

номер детали STP190N55LF3
подробное описание детали  N-channel 55 V, 2.9 miliohm, 120 A, TO-220
PDF  12 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP190N55LF3 датащи(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STP190N55LF3
4/12
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4.
Static
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
Voltage
ID = 250 µA, VGS= 0
55
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,Tc = 125 °C
10
100
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±18 V
±
200
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
12.5
V
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 30 A
VGS= 5 V, ID= 30 A
2.9
3.3
3.7
4.5
m
Ω
m
Ω
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min Typ. Max. Unit
gfs
(1)
1.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward transconductance
VDS = 15 V, ID=60 A
250
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
VDS = 25 V, f=1 MHz, VGS=0
6200
1450
80
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD= 44 V, ID = 120 A
VGS = 5 V
(see Figure 16)
60
20
30
80
nC
nC
nC



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