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STM8L151C8 датащи(PDF) 94 Page - STMicroelectronics

номер детали STM8L151C8
подробное описание детали  8-bit ultralow power MCU, up to 64 KB Flash 2 KB data EEPROM, RTC, LCD, timers, USARTs, I2C, SPIs, ADC, DAC, comparators
PDF  134 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
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STM8L151C8 датащи(HTML) 94 Page - STMicroelectronics

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Electrical parameters
STM8L15xx8, STM8L15xR6
94/134
DocID17943 Rev 6
Flash memory
Table 36. Flash program and data EEPROM memory
Symbol
Parameter
Conditions
Min.
Typ.
Max.
(1)
Unit
VDD
Operating voltage
(all modes, read/write/erase)
fSYSCLK = 16 MHz
1.65
3.6
V
tprog
Programming time for 1 or 128 bytes (block)
erase/write cycles (on programmed byte)
6
ms
Programming time for 1 to 128 bytes (block)
write cycles (on erased byte)
3
Iprog
Programming/ erasing consumption
TA=+25 °C, VDD = 3.0 V
0.7
mA
TA=+25 °C, VDD = 1.8 V
tRET(2)
Data retention (program memory) after 10000
erase/write cycles at TA=−40 τ ο +85 °C
(6 suffix)
TRET=+85 °C
30(1)
years
Data retention (program memory) after 10000
erase/write cycles at TA=−40 τ ο +125 °C
(3 suffix)
TRET=+125 °C
5(1)
Data retention (data memory) after 300000
erase/write cycles at TA=−40 τ ο +85 °C
(6 suffix)
TRET=+85 °C
30(1)
Data retention (data memory) after 300000
erase/write cycles at TA=−40 τ ο +125 °C
(3 suffix)
TRET=+125 °C
5(1)
NRW (3)
Erase/write cycles (program memory)
TA=−40 τ ο +85 °C
(6 suffix),
TA=−40 τ ο +105 °C
(7 suffix) or
TA=−40 τ ο +125 °C
(3 suffix)
10(1)
kcycles
Erase/write cycles (data memory)
300(1)
(4)
1. Data based on characterization results, not tested in production.
2. Conforming to JEDEC JESD22a117
3. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a write/erase operation
addresses a single byte.
4. Data based on characterization performed on the whole data memory.



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