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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM8L151C8 датащи(PDF) 92 Page - STMicroelectronics |
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STM8L151C8 датащи(HTML) 92 Page - STMicroelectronics |
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92 / 134 page  Electrical parameters STM8L15xx8, STM8L15xR6 92/134 DocID17943 Rev 6 Figure 23. Typical HSI frequency vs. VDD Low speed internal RC oscillator (LSI) In the following table, data are based on characterization results, not tested in production. 3. The trimming step differs depending on the trimming code. It is usually negative on the codes which are multiples of 16 (0x00, 0x10, 0x20, 0x30...0xE0). Refer to the AN3101 “STM8L15x internal RC oscillator calibration” application note for more details. 4. Guaranteed by design, not tested in production Table 34. LSI oscillator characteristics Symbol Parameter Conditions(1) 1. VDD = 1.65 V to 3.6 V, TA = -40 to 125 °C unless otherwise specified. Min. Typ. Max. Unit fLSI Frequency 26 38 56 kHz tsu(LSI) LSI oscillator wakeup time 200(2) 2. Guaranteed by Design, not tested in production. µs D(LSI) LSI oscillator frequency drift(3) 3. This is a deviation for an individual part, once the initial frequency has been measured. 0 °C ≤TA ≤ 85 °C -12 11 % |
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