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STM8L151C8 датащи(PDF) 74 Page - STMicroelectronics |
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STM8L151C8 датащи(HTML) 74 Page - STMicroelectronics |
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74 / 134 page ![]() Electrical parameters STM8L15xx8, STM8L15xR6 74/134 DocID17943 Rev 6 IDD(RUN) Supply current in Run mode All peripherals OFF, code executed from Flash, VDD from 1.65 V to 3.6 V HSI RC osc.(9) fCPU = 125 kHz 0.35 0.46 0.48 0.51 0.59 mA fCPU = 1 MHz 0.54 0.65 0.67 0.7 0.78 fCPU = 4 MHz 1.16 1.27 1.29 1.32 1.4 fCPU = 8 MHz 1.97 2.08 2.1 2.13 2.21 fCPU = 16 MHz 3.54 3.65 3.67 3.7 3.78 HSE external clock (fCPU=fHSE) (8) fCPU = 125 kHz 0.35 0.44 0.46 0.49 0.58 fCPU = 1 MHz 0.53 0.62 0.64 0.67 0.76 fCPU = 4 MHz 1.13 1.22 1.24 1.27 1.36 fCPU = 8 MHz 2 2.09 2.11 2.14 2.23 fCPU = 16 MHz 3.69 3.78 3.8 3.83 3.92 LSI RC osc. fCPU = fLSI 0.110 0.123 0.130 0.138 0.180 LSE external clock (32.768 kHz)(10) fCPU = fLSE 0.100 0.101 0.104 0.119 0.163 1. All peripherals OFF, VDD from 1.65 V to 3.6 V, HSI internal RC osc., fCPU=fSYSCLK 2. For devices with suffix 6 3. For devices with suffix 7 4. For devices with suffix 3 5. CPU executing typical data processing 6. The run from RAM consumption can be approximated with the linear formula: IDD(run_from_RAM) = Freq. * 95 µA/MHz + 250 µA 7. Tested in production. 8. Oscillator bypassed (HSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the HSE consumption (IDD HSE) must be added. Refer to Table 31. 9. The run from Flash consumption can be approximated with the linear formula: IDD(run_from_Flash) = Freq. * 200 µA/MHz + 330 µA 10. Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the LSE consumption (IDD LSE) must be added. Refer to Table 32 Table 20. Total current consumption in Run mode (continued) Symbol Para meter Conditions(1) Typ. Max. Unit 55°C 85 °C (2) 105 °C (3) 125 °C (4) |
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