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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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CD00237391 датащи(PDF) 65 Page - STMicroelectronics |
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CD00237391 датащи(HTML) 65 Page - STMicroelectronics |
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65 / 177 page  STM32F20xxx Electrical characteristics Doc ID 15818 Rev 9 65/177 VDD = 2.4 to 2.7 V Conversion time up to 2 Msps 24 MHz with no Flash memory wait state 4(3) – Degraded speed performance – I/O compensation works up to 48 MHz 16-bit erase and program operations VDD = 2.7 to 3.6 V(4) Conversion time up to 2 Msps 30 MHz with no Flash memory wait state 3(3) – Full-speed operation – I/O compensation works –up to 60 MHz when VDD = 3.0 to 3.6 V –up to 48 MHz when VDD = 2.7 to 3.0 V 32-bit erase and program operations 1. The number of wait states can be reduced by reducing the CPU frequency (see Figure 19). 2. If IRROFF is set to VDD, this value can be lowered to 1.7 V when the device operates in the 0 to 70 °C temperature range. 3. Thanks to the ART accelerator and the 128-bit Flash memory, the number of wait states given here does not impact the execution speed from Flash memory since the ART accelerator allows to achieve a performance equivalent to 0 wait state program execution. 4. The voltage range for OTG USB FS can drop down to 2.7 V. However it is degraded between 2.7 and 3 V. Table 13. Limitations depending on the operating power supply range Operating power supply range ADC operation Maximum Flash memory access frequency (fFlashmax) Number of wait states at maximum CPU frequency (fCPUmax= 120 MHz)(1) I/O operation FSMC_CLK frequency for synchronous accesses Possible Flash memory operations |
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